- 品牌/商標：萬州
- 企業類型：制造商
- 原產地：珠海
紅外發射二極管
一、 尺寸；Size
二、描述；Description
D3IR3-45系列發射管是采用GaAlAs技術的高功率紅外發射二極管，采用透明的塑料封裝。在一個相似的波長內與標準GaAs比較，采用GaAlAs技術的這些發射二極管輻射功率達到超過100%的改善。正向電壓在低電流和高脈沖電流工作條件下大致對應于標準技術。
所以這些發射二極管是理想的作為標準發射器件的高性能產品。
D3IR3-45 is a high efficiency infrared emitting diode in GaAlAs technology, molded in clear, grey tinted plastic packages
In comparison with the standard GaAs on GaAlAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. The forward voltages at low current and at high pulse current roughly correspond to the low values of the standard technology.
Therefore these emitters are ideally suitable as high performance replacements of standard emitters.
三、 基本參數；Principal character
|
型號 Model No. |
材料 Material |
波長Wavelength λp（nm） |
顏色 Lens Color |
發射角度 Viewing Angle 2θ1/2 |
|
D3IR3-45 |
GaAlAs/GaAs |
940 |
Water Clear |
45 |
四、 極限參數；Absolute Maximum Ratings at Ta=25℃
|
參數 Parameter |
測試條件 Test Conditions |
符號Symbol |
數值 Value |
單位Unit |
|
正向峰值電流 Peak Forward Current |
|
Ifm |
100 |
mA |
|
正向脈沖電流 Surge Forward Current |
tp/T = 0.5, tp = 100 μs |
Ifsm |
1.5 |
A |
|
耗散功率 Power Dissipation |
|
Pv |
200 |
mW |
|
結溫 Junction Temperature |
|
Tj |
100 |
℃ |
|
工作溫度范圍 Operating |
|
Tamb |
-25 +80 |
℃ |
|
存儲溫度范圍 |
|
Tstg |
-55 +100 |
℃ |
|
焊接溫度 Soldering Temperature |
t ≦ 5sec, 3 mm from case |
Tsd |
260 |
℃ |
五、光電特性；Electrical Optical Characteristics at Ta= 25℃
|
參數 Parameter |
測試條件 Test Conditions |
符號 Symbol |
小 Min |
典型 Typ |
Max |
單位 Unit |
|
正向電壓 Forward Voltage |
IF = 50mA |
VF |
1.25 |
|
1.5 |
V |
|
正向電流 Forward Current |
|
If |
|
40 |
|
mA |
|
反向電壓 Reverse voltage |
IR=10μA |
VR |
9 |
|
|
V |
|
反向漏電流 Reverse Current |
VR=5V |
IR |
|
|
10 |
μA |
|
發射強度 Radiant Intensity |
IF =50 mA |
Ie |
5 |
|
9 |
mW/sr |
|
結電容 Junction Capacitance |
VR = 0 V, f = 1 MHz, E = 0 |
Cj |
|
25 |
|
Pf |
|
功率衰減系數 Temp. Coefficient of e |
IF = 50 mA |
TKe |
|
-0.6 |
|
%/K |
|
發射角度 Angle of Half Intensity |
|
2θ1/2 |
|
45 |
|
deg |
|
峰值波長 Peak Wavelength |
IF = 50 mA |
λp |
|
940 |
|
nm |
|
光譜偏差范圍 Spectral Bandwidth |
IF = 50 mA |
△λ |
|
50 |
|
nm |
|
波段衰減系數 Temp. Coefficient of λp |
IF = 50 mA |
TKλp |
|
0.2 |
|
nm/K |
|
上升時間 Rise Time |
IF = 50 mA |
tr |
|
800 |
|
ns |
|
下降時間 Fall Time |
IF = 50 mA |
tf |
|
800 |
|
ns |
