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20V N-Channel Enhancement-Mode MOSFET
RDS(ON), Vgs@1.8V, Ids@
RDS(ON), Vgs@2.5V, Ids@
RDS(ON), Vgs@4.0V, Ids@
RDS(ON), Vgs@4.5V, Ids@
RDS(ON), Vgs@10V, Ids@
Features
? Advanced trench process technology
? High Density Cell Design For Ultra Low On-Resistance
? High Power and Current handing capability
? Ideal for Li ion battery pack applications
