FDT457N
N-Channel Enhancement Mode Field Effect Transistor
General Dcription Featur
5 A, 30 V. RDS(ON)
= 0.06 Ω @ VGS = 10 V
RDS(ON)
= 0.090 Ω @ VGS = 4.5 V.
High density cell dign for extremely low RDS(ON)
.
High power and current handling capability in a widely used
surface mount package.
The N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
procs is pecially tailored to minimize on-state ristance,
provide ior switching performance. The products are
well suited to low voltage, low current applications such as
notebook computer power management, battery powered
circuits, and DC motor control.
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